Heterostructure of TiO2 and macroporous silicon: The simplest relaxation oscillator
Heterostructure of TiO2 and macroporous silicon: The simplest relaxation oscillator
The dielectric characteristics of TiO2 (capacitive behavior) in combination with the tunnel diode characteristics of the heterostructure (presenting a negative differential resistance, when activated at a threshold voltage) are shown to give rise to the relaxation oscillations.