SILICON NANOELECTRONICS

NANOELECTRONICS Edited by Shunri Oda • David Ferry Boca Raton London New York Singapore A CRC title, part of the Taylor & Francis imprint, a member of the Taylor & Francis Group, the academic division of T&F Informa plc. Copyright © 2006 Taylor & Francis Group, LLC Published in 2006 by CRC Press Taylor & Francis Group 6000 Broken Sound Parkway NW, Suite 300 Boca Raton, FL 33487-2742 © 2006 by Taylor & Francis Group, LLC CRC Press is an imprint of Taylor & Francis Group No claim to original U.S. Government works Printed in the United States of America on acid-free paper 10 9 8 7 6 5 4 3 2 1 International Standard Book Number-10: 0-8247-2633-2 (Hardcover) International Standard Book Number-13: 978-0-8247-2633-1 (Hardcover) Library of Congress Card Number 2005005007 This book contains information obtained from authentic and highly regarded sources. Reprinted material is quoted with permission, and sources are indicated. A wide variety of references are listed. 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Trademark Notice: Product or corporate names may be trademarks or registered trademarks, and are used only for identification and explanation without intent to infringe. Library of Congress Cataloging-in-Publication Data Silicon nanoelectronics / edited by Shunri Oda and David Ferry. p. cm. ISBN 0-8247-2633-2 1. Molecular electronics. [DNLM: 1. Nanotechnology. 2. Silicon Compounds. ] I. Oda, Shunri. II. Ferry, David K. TK7874.8.S55 2005 621.381--dc22 Taylor & Francis Group is the Academic Division of T&F Informa plc. 2005005007 Visit the Taylor & Francis Web site at http://www.taylorandfrancis.com and the CRC Press Web site at http://www.crcpress.com Copyright © 2006 Taylor & Francis Group, LLC Preface The advances in ultra-large-scale integration (ULSI) technology mainly have been based on downscaling of the minimum feature size of complementary metal-oxide semiconductor (CMOS) transistors. The limit of scaling is approaching and there are unsolved problems such as the number of electrons in the device’s active region. If this number is reduced to less than 10 electrons (or holes), quantum fluctuation errors will occur and the gate insulator thickness will become too small to block quantum mechanical tunneling, which may result in unacceptably large leakage currents. On the other hand, the recent evolution of nanotechnology may provide opportunities for novel devices, such as single-electron devices, carbon nanotubes, Si nanowires, and new materials, which may solve these problems. Utilization of quantum effects and ballistic transport characteristics also may provide novel func-tions for silicon-based devices. Among various candidate materials for nanometer scale devices, silicon nanodevices are particularly promising because of the existing silicon process infrastructure in semiconductor industries, the compatibility to CMOS circuits, and a nearly perfect interface between the natural oxide and silicon. The goal of this book is to give an update of the current state of the art in the field of silicon nanoelectronics. This book is a compact reference source for students, scientists, engineers and specialists in various fields including electron devices, solid- state physics and nanotechnology. Shunri Oda and David Ferry Copyright © 2006 Taylor & Francis Group, LLC About the Editors Shunri Oda is a professor at the Quantum Nano-electronics Research Center and the chair of the Department of Physical Electronics at the Tokyo Institute of Technology in Tokyo, Japan, where he obtained his doctorate in physical information pro-cessing. He is the director of the CREST and SORST NeoSilicon projects, which are sponsored by the Japan Science and Technology Agency. His recent research interests include formation of well-controlled silicon quantum structures and nanoscale silicon devices. He has authored more than 200 papers published in journals and conference pro-ceedings. David K. Ferry is the Regents’ Professor of Elec-trical Engineering at the Arizona State University in Tempe, Arizona, where he is actively involved in thesis and postdoctoral mentoring. He received his doctorate in elecrical engineering from The Univer-sity of Texas at Austin. He has coauthored many recent articles relevant to nanotechnology. In 2000, he received Arizona State University’s Outstanding Graduate Mentor Award, and in 1999 he received the Institute of Electrical and Electronics Engi-neers’s Cledo Brunetti Award, for advances in nano-electronics theory and experiment. Copyright © 2006 Taylor & Francis Group, LLC ... - tailieumienphi.vn