N-Channel JFET

2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) –8 V(BR)GSS Min (V) –25 gfs Min (mS) 2 IDSS Min (mA) 2 FEATURES Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz Very Low Noise: 3 dB @ 400 MHz Very Low Distortion High ac/dc Switch Off-Isolation High Gain: AV = 60 @ 100 A BENEFITS Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification APPLICATIONS High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet. TO-226AA (TO-92) S 1 G 2 D 3 Top View ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150C Document Number: 70238 S–04028—Rev. D ,04-Jun-01 Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/C above 25C www.vishay.com 7-1 2N3819 Vishay Siliconix SPECIFICATIONS (TA = 25C UNLESS OTHERWISE NOTED) Parameter Static Limits Symbol Test Conditions Min Typa Max Unit Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage Dynamic V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) IG = –1 A , VDS = 0 V VDS = 15 V, ID = 2 nA VDS = 15 V, VGS = 0 V VGS = –15 V, VDS = 0 V TA = 100C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = –8 V VGS = 0 V, ID = 1 mA VDS = 15 V, ID = 200 A IG = 1 mA , VDS = 0 V –25 –35 –3 –8 V 2 10 20 mA –0.002 –2 nA –0.002 –2 A –20 2 pA 150 –0.5 –2.5 –7.5 0.7 V Common-Source Forward Transconductance Common-Source Output Conductancec gfs VDS = 15 V VGS = 0 V gos f = 1 kHz 2 5.5 6.5 f = 100 MHz 1.6 5.5 mS f = 1 kHz 25 50 S Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en 2.2 8 VDS = 15 V, VGS = 0 V, f = 1 MHz 0.7 4 VDS = 10 V, VGS = 0 V, f = 100 Hz 6 pF nV¤ ÖHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH b. Pulse test: PW 300 s, duty cycle 2%. c. This parameter not registered with JEDEC. TYPICAL CHARACTERISTICS (TA = 25C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 10 16 IDSS 8 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 500 100 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V 400 f = 1 kHz 80 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDS = 15 V, VGS = 0 V f = 1 kHz 2 100 20 0 0 0 –2 –4 –6 –8 –10 0 0 0 –2 –4 –6 –8 –10 VGS(off) – Gate-Source Cutoff Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V) www.vishay.com 7-2 Document Number: 70238 S–04028—Rev. D ,04-Jun-01 2N3819 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25C UNLESS OTHERWISE NOTED) 100 nA Gate Leakage Current 5 mA 10 nA 1 mA 0.1 mA Common-Source Forward Transconductance vs. Drain Current 10 VGS(off) = –3 V VDS = 10 V f = 1 kHz 8 1 nA TA = 125C 100 pA 5 mA 10 pA 1 pA TA = 25C IGSS @ 125C 1 mA 0.1 mA IGSS @ 25C TA = –55C 6 25C 4 125C 2 0.1 pA 0 10 20 VDG – Drain-Gate Voltage (V) 0 0.1 1 10 ID – Drain Current (mA) Output Characteristics 10 VGS(off) = –2 V 8 VGS = 0 V 6 –0.2 V –0.4 V 4 –0.6 V –0.8 V 2 –1.0 V –1.2 V 0 –1.4 V Output Characteristics 15 VGS(off) = –3 V 12 VGS = 0 V 9 –0.3 V –0.6 V 6 –0.9 V –1.2 V 3 –1.5 V –1.8 V 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Transfer Characteristics 10 Transfer Characteristics 10 VGS(off) = –2 V VDS = 10 V 8 TA = –55C 6 25C VGS(off) = –3 V VDS = 10 V 8 TA = –55C 25C 6 125C 4 125C 4 2 2 ... - tailieumienphi.vn